Antoine Rousseau,Katia Allegraud,Olivier Guaitella
申请号：
US12652857
公开号：
US20120315194A9
申请日:
2010.01.06
申请国别(地区):
US
年份:
2012
代理人:
摘要：
The invention relates to a gas processing unit adapted for generating a surface plasma in the vicinity of a photocatalyst, that has a planar configuration. The photocatalyst is deposited in the form of a thin layer on a dielectric substrate and at least one plasma supply electrode is formed above the photocatalyst thin layer. Such a configuration increases the interaction between the plasma and the photocatalyst. The unit can be used for a gas processing of the pollution-control, odour reduction or bactericidal treatment type with a high efficiency.
