微細構造体の製造方法

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专利权人:

キヤノン株式会社

发明人:

王 詩男,中村 高士,手島 隆行,▲瀬▼戸本 豊,渡辺 信一郎

申请号：

JP2010265093

公开号：

JP5773624B2

申请日:

2010.11.29

申请国别(地区):

JP

年份:

2015

代理人:

摘要：

A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/