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Device for operating and reading an ultrasound transducer group for ultrasound computed tomography, and ultrasound computed tomography machine
专利权人:
칼스루헤 인스티투트 퓌어 테흐놀로기
发明人:
페릭, 이반,자프, 마이클,젬메케, 하트무트,레이즈, 리차드
申请号:
KR1020207009006
公开号:
KR1020200041996A
申请日:
2018.09.26
申请国别(地区):
KR
年份:
2020
代理人:
摘要:
The present invention relates to a device (110) for operating and reading a group of ultrasound transducers (112) for ultrasound computed tomography, the device (110) as an input channel (124) a first zone (118) and an output channel As 126, a common substrate 116 having a second zone 120 electrically separated from the first zone by n troughs; At least one high voltage signal input 128 on the first zone for receiving analog high voltage signals; At least one high voltage amplifier 132 with high voltage CMOS semiconductor components on the first zone 118 for receiving and amplifying analog high voltage signals; A group of at least one ultrasound transducer 112 on the first zone 118-at least one of the ultrasound transducers 112 is designed to generate ultrasound signals during the transmission phase, and at least one of the ultrasound transducers 112 Is designed to receive ultrasonic measurement signals 140-; At least one multiplexer 156 for combining ultrasonic measurement signals 140 from at least two different ultrasonic transducers 112 to a common measurement signal 148; At least one low noise low voltage preamplifier 152 with CMOS semiconductor components on the second zone 120 for receiving the measurement signal 148; At least one output switch 150 on the second zone 120 for canceling the application of the measurement signal 148 to the low voltage preamplifier 152 during at least the transmit phase; And at least one low voltage signal output 154 for transmitting the preamplified measurement signal 148 to the external control and analysis unit 212.본 발명은 초음파 컴퓨터 단층 촬영을 위한 초음파 트랜스듀서(112) 그룹을 작동 및 판독하기 위한 디바이스(110)에 관한 것으로, 디바이스(110)는 입력 채널(124)로서 제1 구역(118) 및 출력 채널(126)로서, n 트러프(trough)들에 의해 제1 구역으로부터 전기적으로 분리된 제2 구역(120)을 갖는 공통 기판(116); 아날로그 고전압 신호들을 수신하기 위한 제1 구역 상의 적어도 하나의 고전압 신호 입력(128); 아날로그 고전압 신호들을 수신 및 증폭하기 위한 제1 구역(118) 상의, 고전압 CMOS 반도체 컴포넌트들을 갖는 적어도 하나의 고전압 증폭기(132); 제1 구역(118) 상의 적어도 하나의 초음파 트랜스듀서(112) 그룹 - 초음파 트랜스듀서들(112) 중 적어도 하나는 송신 페이즈 동안 초음파 신호들을
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