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Algae generation suppression treatment method on article surface
专利权人:
中国鉄管継手株式会社;国立大学法人広島大学
发明人:
二川 浩樹,高田 祐司
申请号:
JP2008256236
公开号:
JP5424450B2
申请日:
2008.10.01
申请国别(地区):
JP
年份:
2014
代理人:
摘要:
<;P>;PROBLEM TO BE SOLVED: To provide an algae outgrowth inhibitor and an algae outgrowth suppressing method in which maintenance is easy or unnecessary and versatility is high, and which is cheap. <;P>;SOLUTION: The algae outgrowth inhibitor controls outgrowth of algae on a surface of goods, comprises making (a) a silicon-containing compound expressed by general formula (1), wherein R<;SP>;1<;/SP>;represents a hydrocarbon having a carbon number of 6 or more, R<;SP>;2<;/SP>;and R<;SP>;3<;/SP>;show a lower hydrocarbon group which may be the same or different, R<;SP>;4<;/SP>;shows a bivalent lower hydrocarbon group, R<;SP>;5<;/SP>;, R<;SP>;6<;/SP>;and R<;SP>;7<;/SP>;show a lower alkyl group or a lower alkoxy group which may be same or different, X shows a halogen ion or an organic carbonyloxy ion, uniformly disperse in water by (b) at least one surfactant chosen from a group consisting of a cationic surfactant (however, excluding the silicon compound) (b1), a nonionic surfactant (b2), and an ampholytic surfactant (b3). <;P>;COPYRIGHT: (C)2010,JPO&INPIT
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