MATÉRIAU D'IMPLANT ET SON PROCÉDÉ DE PRODUCTION

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专利权人:

Toyo Advanced Technologies Co.; Ltd.

发明人:

申请号：

EP09839942.1

公开号：

EP2397163B1

申请日:

2009.02.10

申请国别(地区):

EP

年份:

2017

代理人:

摘要：

An implant material includes a base material, and a silicon-containing carbon thin film formed on a surface of the base material. The carbon thin film contains a C-C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded, and a ratio of the SiC component is 0.06 or higher.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/