Provided is a method for inspecting a pressure pulse wave sensor, in which it is possible to know an influence of a change in usage environment on detection accuracy of a pressure pulse wave. A sensor chip 10 includes a semiconductor substrate 10A and a terminal portion (10B, 10C). A pressure-sensitive element array 10D is formed on a portion of the semiconductor substrate 10A whose thickness is reduced due to a recess 10a. The terminal portion (10B, 10C) is electrically connected to the pressure-sensitive element array 10D. After the sensor chip 10 is bonded and fixed to a substrate 11 so that the recess 10a communicates with atmospheric air through only a through hole 11D of the substrate 11, a terminal portion (11B, 11C) of the substrate 11 and the terminal portion (10B, 10C) of the sensor chip 10 are connected through a wire (W1, W2). Then, characteristic evaluation is performed on the sensor chip 10 based on a signal outputted from the terminal portion (11B, 11C) of the substrate 11 in a state in which air is sucked from the through hole 11D to thereby apply negative pressure to a face where the pressure-sensitive element array 10D is formed.
