The imaging device 1 includes a silicon layer 10, a wiring layer 20 including an insulator having a lower dielectric constant than silicon oxide, a cover glass 40 covering the light receiving portion 11 of the light receiving surface 10 SA of the silicon layer 10, a back surface of the wiring layer 20 A guard ring 24 is formed along the outer edge of the wiring layer 20, and in a region not covered with the cover glass 40 of the silicon layer 10, a conductive film is formed from the conductor of the wiring layer 20 There is a through hole 10 H having the electrode pad 29 as its bottom surface, and the insulator of the wiring layer 20 is not exposed on the inner surface of the through hole 10 H.撮像装置1は、シリコン層10と、酸化シリコンよりも低誘電率の絶縁体を含む配線層20と、シリコン層10の受光面10SAの受光部11を覆うカバーガラス40と、配線層20の裏面20SBを覆うシリコン基板50と、を具備し、配線層20に外縁に沿ったガードリング24が形成されており、シリコン層10のカバーガラス40で覆われていない領域に、配線層20の導体からなる電極パッド29を底面とする貫通孔10Hがあり、貫通孔10Hの内面に配線層20の絶縁体が露出していない。
