Jin Cai,Effendi Leobandung,Tak H. Ning,Jeng-Bang Yau
申请号：
US13647547
公开号：
US20140088401A1
申请日:
2012.10.09
申请国别(地区):
US
年份:
2014
代理人:
摘要：
A radiation dosimeter includes a semiconductor substrate and a buried insulator layer disposed on the semiconductor substrate. The buried insulator layer has a plurality of charge traps. A semiconductor layer is disposed on the buried insulator layer. The semiconductor layer has an emitter, an intrinsic base, and a collector laterally arranged with respect to one another. In response to radiation exposure by the radiation dosimeter, positive charges are trapped in the plurality of charge traps in the buried insulator layer, the amount of positive charge trapped being used to determine the amount of radiation exposure. A method for radiation dosimetry includes providing a radiation dosimeter, where the radiation dosimeter includes a lateral silicon-on-insulator bipolar junction transistor having a buried insulator layer exposing the radiation dosimeter to ionizing radiation determining a change in one of the collector current and current gain of the radiation dosimeter and determining an amount of the radiation dose based on the change in one of the collector current and current gain.
