JOHN SEYMOUR,MAYURACHAT NING GULARI,JOERG LAHANN,DARYL KIPKE
申请号：
US14051886
公开号：
US20140039589A1
申请日:
2013.10.11
申请国别(地区):
US
年份:
2014
代理人:
摘要：
A method of manufacturing an implantable electronic device, including: providing a silicon wafer； building a plurality of layers coupled to the wafer including an oxide layer coupled to the silicon wafer； a first reactive parylene layer coupled to the oxide layer, an electrode layer coupled to the first reactive parylene layer, and a second reactive parylene layer, coupled to the electrode layer, that chemically bonds to the first reactive polymer layer, and a second polymer layer coupled to the second reactive parylene layer； coating the plurality of layers with an encapsulation, and modifying the encapsulation and at least one of the plurality of layers to expose an electrode site in the electrode layer.
