JOHN SEYMOUR,MAYURACHAT NING GULARI,JOERG LAHANN,DARYL KIPKE
申请号:
US14051886
公开号:
US20140039589A1
申请日:
2013.10.11
申请国别(地区):
US
年份:
2014
代理人:
摘要:
A method of manufacturing an implantable electronic device, including: providing a silicon wafer; building a plurality of layers coupled to the wafer including an oxide layer coupled to the silicon wafer; a first reactive parylene layer coupled to the oxide layer, an electrode layer coupled to the first reactive parylene layer, and a second reactive parylene layer, coupled to the electrode layer, that chemically bonds to the first reactive polymer layer, and a second polymer layer coupled to the second reactive parylene layer; coating the plurality of layers with an encapsulation, and modifying the encapsulation and at least one of the plurality of layers to expose an electrode site in the electrode layer.