Richter Ralf,Dünkel Stefan,Trentzsch Martin,Beyer Sven
申请号：
US201715676529
公开号：
US10163933(B1)
申请日:
2017.08.14
申请国别(地区):
美国
年份:
2018
代理人:
Ditthavong & Steiner, P.C.
摘要：
Methods of forming a buffer layer to imprint ferroelectric phase in a ferroelectric layer and the resulting devices are provided. Embodiments include forming a substrate; forming a buffer layer over the substrate; forming a ferroelectric layer over the buffer layer; forming a channel layer over the ferroelectric layer; forming a gate oxide layer over a portion of the channel layer; and forming a gate over the gate oxide layer.
