Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人:
Qian Bainian,Brugarolas Brufau Teresa,Kozhukh Julia
申请号：
US201715617263
公开号：
US2018354094(A1)
申请日:
2017.06.08
申请国别(地区):
美国
年份:
2018
代理人:
摘要：
The present invention provides a chemical mechanical (CMP) polishing pad for planarizing at least one of semiconductor, optical and magnetic substrates comprising a polishing layer that has a geometric center, and in the polishing layer a plurality of offset circumferential grooves, such as circular or polygonal grooves, which have a plurality of geometric centers and not a common geometric center. In the polishing layer of the present invention, each circumferential groove is set apart a pitch distance from its nearest or adjacent circumferential groove or grooves; for example, the pitch increases on the half or hemisphere of the polishing layer that is farthest from the geometric center of its innermost circumferential groove and decreases on the half of the polishing layer nearest that geometric center. Preferably, the polishing layer contains an outermost circumferential groove that is complete and continuous.
