イオン発生素子
- 专利权人:
- シャープ株式会社
- 发明人:
- 松岡 憲弘
- 申请号：
- JP2008002116
- 公开号：
- JP5001863B2
- 申请日:
- 2008.01.09
- 申请国别(地区):
- JP
- 年份:
- 2012
- 代理人:
- 摘要：
PROBLEM TO BE SOLVED: To provide an ion generating element achieving effective ion generation and ready manufacture.
SOLUTION: The ion generating element 1 has a substrate 10 and an ion generation electrode 20 formed on the substrate 10 using a membrane conductor to generate ions by high-voltage application. The ion generation electrode 20 includes a discharge part 21 having a peak 22. The peak 22 of the discharge part 21 is situated above the substrate 10 at a position of a distance of less than 0.6 mm away from an end face 12 of the substrate 10.
COPYRIGHT: (C)2009,JPO&INPIT
- 来源网站：
- 中国工程科技知识中心
