Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人:
Guo Yi,Mosley David
申请号：
US201615281873
公开号：
US2018094166(A1)
申请日:
2016.09.30
申请国别(地区):
美国
年份:
2018
代理人:
摘要：
The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions comprising a positively charged silica particle composition with from 3 to 20 wt. % in total, based on the total silica particle solids in the CMP polishing composition, of one or more negatively charged silica particle compositions in which the silica particles have a z-average particle size as determined by Dynamic Light Scattering (DLS) of from 5 to 50 nm. The z-average particle size (DLS) ratio of the silica particles in the positively charged silica particle composition to that of the silica particles in the one or more negatively charged silica particle compositions ranges from 1:1 to 5:1 or, preferably, from 5:4 to 3:1. The compositions enable improved polishing of dielectric or oxide substrates and are shelf stable for at least 7 days at room temperature.
