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Logical operation circuit and memory device
专利权人:
TOSHIBA MEMORY CORPORATION
发明人:
Nakatsuka Keisuke
申请号:
US201514974282
公开号:
US9773539(B2)
申请日:
2015.12.18
申请国别(地区):
美国
年份:
2017
代理人:
Holtz, Holtz & Volek PC
摘要:
According to one embodiment, a logical operation circuit includes a magnetic tunnel junction (MTJ) element and driver. The MTJ element includes a first magnetic layer, a second magnetic layer, and an intermediate layer between the first and second magnetic layers. An orientation of magnetization of the second magnetic layer flips by a first current which flows through the MTJ element in a first state from the second magnetic layer to the first magnetic layer. The driver is coupled to the first magnetic layer without a magnetic layer interposed and coupled to the second magnetic layer, and passes a second current through the MTJ element in the first state from the second magnetic layer to the first magnetic layer. A magnitude of the second current is larger than 1.5 times a magnitude of the first current.
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