Disclosed is a transparent conductive film manufacturing method which enables the formation of a transparent conductive film having excellent etching properties and conductivity, without using water vapour. The disclosed manufacturing method for a transparent conductive film comprises a step wherein an indium tin oxide thin film is formed on a substrate by sputtering a target material containing a first component which is formed from indium oxide, a second component which is formed from tin oxide, and a third component which is formed from at least one element, or the oxide thereof, selected from among La, Nd, Dy, Eu, Gd, Tb, Zr, Al, Si, Ti, and B. The method further comprises a step wherein the indium tin oxide thin film is patterned using an etching solution, and a step wherein the indium tin oxide thin film is crystalised by means of heat treatment. Due to the above method the ITO film can be etched by a weak acid immediately after film formation and a desired conductivity can be imparted to the ITO film.
