MOS TRANSISTOR STRUCTURE AND METHOD OF FORMING THE STRUCTURE WITH VERTICALLY AND HORIZONTALLY-ELONGATED METAL CONTACTS

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专利权人:

Texas Instruments Incorporated

发明人:

McMullan Russell Carlton,Benaissa Kamel

申请号：

US201715409893

公开号：

US2017133366(A1)

申请日:

2017.01.19

申请国别(地区):

美国

年份:

2017

代理人:

摘要：

Elongated metal contacts with longitudinal axes that lie in a first direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie in the first direction, and elongated metal contacts with longitudinal axes that lie a second direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie the second direction, where the second direction lies orthogonal to the first direction.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/