Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE

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作   者：

Semlali, Elias;  Avit, Geoffrey;  Andre, Yamina;  Gil, Evelyne;  Moskalenko, Andriy;  Shields, Philip;  Dubrovskii, Vladimir G.;  Cattoni, Andrea;  Harmand, Jean-Christophe;  Trassoudaine, Agnes; 

作者机构：

Univ Paris Saclay;  Saint Petersburg University Faculty of Physics;  Univ Bath;  Univ Clermont Auvergne; 

关键词：

hydride vapor phase epitaxy;  MODE;  GALLIUM NITRIDE;  NANOROD ARRAYS;  GaN nanowires;  selective area growth;  MORPHOLOGY; 

期刊名称：

Nanotechnology

i s s n：

0957-4484

年卷期：

2024 年 35 卷 26 期

页   码：

ARTN 265604-

页   码：

摘   要：

Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of GaN on sapphire masked with SiN x . We discuss two occurrences related to axial and radial growth of GaN nanowires. A growth suppression phenomenon was observed under certain conditions, which was circumvented by applying the cyclic growth mode. A theoretical model involving inhibiting species was developed to understand the growth suppression phenomenon on the masked substrates. Various morphologies of GaN nanocrystals were obtained by controlling the competition between the growth and blocking mechanisms as a function of the temperature and vapor phase composition. The optimal growth conditions were revealed for obtaining regular arrays of similar to 5 mu m long GaN nanowires.