Optical Microlithography of Perovskite Quantum Dots/Organic Semiconductor Heterojunctions for Neuromorphic Photosensors

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作   者：

Jia Huang;  Yue Wu;  Shilei Dai;  Xu Liu;  Pu Guo;  Junyao Zhang;  Tongrui Sun;  Ziyi Guo;  Yutong Xu;  Haixia Liang;  Lize Xiong;  Huawei Hu; 

作者机构：

School of Materials Science and EngineeringTongji UniversityShanghai 201804;  Translational Research Institute of Brain and Brain-Like IntelligenceShanghai Fourth People’s Hospital Affiliated to Tongji UniversityTongji UniversityShanghai 200434;  State Key Laboratory forModification of Chemical Fibers and PolymerMaterialsCollege of Materials Science and EngineeringDonghua UniversityShanghai 201620;  P. R. China||Translational Research Institute of Brain and Brain-Like IntelligenceShanghai Fourth People’s Hospital Affiliated to Tongji UniversityTongji UniversityShanghai 200434;  P. R. China; 

关键词：

photosensors;  organic semiconductors;  quantum dots;  heterojunctions;  neuromorphic; 

期刊名称：

Advanced functional materials

i s s n：

1616-301X

年卷期：

2024 年 34 卷 23 期

页   码：

2315175.1-2315175.11

页   码：

摘   要：

Heterojunctions of perovskite quantum dots (QDs) and organicsemiconductors (OSCs) can synergistically leverage the unique optoelectronicproperties of different functional components to fabricate advancedoptoelectronic devices, such as neuromorphic photosensors, by low-costsolution processes. However, a long-lasting challenge remains inmicropatterning high-density perovskite QDs/polymer OSCs heterojunctionarray with high yield and reliability due to the fragility of functional layers toorganic solvents. High-density and micro-structure patterned organicneuromorphic photosensor arrays based on OSCs and QDs are thus rarelyreported. Here, an effective cross-linking microlithography strategy isreported to fabricate perovskite QDs/OSCs microstructure arrays. Thefabricated CsPbBr3 QDs/(poly(2,5-(2-octyldodecyl)?3,6-diketopyrrolopyrrolealt-5,5-(2,5-di(thien-2-yl) thieno [3,2-b] thiophene) (DPPDTT) planerheterojunctions phototransistor array presents minor device-to-devicevariation, high density (6500 devices cm~(?2)), and high yield (almost 100%).The device array exhibits impressive merits as a neuromorphic photosensor,including a photosensitivity of 3.02 × 10~7, a responsivity up to1.92 × 10~4 A W~(?1), a detectivity exceeding 1014 Jones, and a persistentphotoconductivity. Moreover, an energy consumption as low as 27.9 aJ isachieved at an operating voltage of ?0.0001 V. The potential application of theheterojunction neuromorphic photosensor array in motion perception isdemonstrated in conjunction with a neural network.