China||State Key Laboratory of Electronic Thin Films and Integrated Devices;
University of Electronic Science and Technology of China;
China||Department of Physics;
Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception;
School of Information Science and Technology;
Xi Chang University;
Ningbo 315201;
Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology;
Department of Materials Science;
Chengdu 611731;
Xi Chang 515013;
China||State Key Laboratory of Photovoltaic Science and Technology;
Fudan University;
China||Key Laboratory of Liangshan Agriculture Digital Transformation of Sichuan Provincial Education Department;
Ningbo Institute of Materials Technology and Engineering;
Huzhou 313001;
Chinese Academy of Sciences;
School of Optoelectronic Science and Engineering;
China||Suzhou Institute for Advanced Research;
Xi Chang 615013;
China;
China||Yangtze Delta Region Institute (Huzhou);
University of Science and Technology of China;
Suzhou 215123;
Hefei 230026;
Institute of Optoelectronics;
Shanghai 200433;
期刊名称：
Science
i s s n：
0036-8075
年卷期：
2024 年
385 卷
Jul.5 TN.6704 期
页 码：
57-62
页 码：
摘 要：
Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS_2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 10~6 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 10~5 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.
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