Enhanced dielectric properties and improved thermal stability in TiO2-based ceramics by Cu and Nb co-doping

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作   者：

Qiao, Peng;  Zhang, Yingning;  Wang, Jing;  Peng, Zhanhui;  Wu, Di;  Chao, Xiaolian;  Yang, Zupei;  Liang, Pengfei; 

作者机构：

Shaanxi Normal University School of Physics and Information Technology;  Shaanxi Normal Univ; 

关键词：

Low dielectric loss;  TiO2-Based ceramics;  ORIGIN;  PERFORMANCE COLOSSAL PERMITTIVITY;  NIOBIUM;  FILMS;  Colossal permittivity;  DOPED TIO2;  RELAXATIONS;  BEHAVIOR;  EPDD;  PLUS; 

期刊名称：

Ceramics International

i s s n：

0272-8842

年卷期：

2024 年 50 卷 1 Pt.B 期

页   码：

2242-2248

页   码：

摘   要：

TiO2-based ceramics have application potential in multilayer ceramic capacitors because of its large dielectric constant and low dielectric loss. In this work, Cu2+, Nb5+ co-doped TiO2 ceramics (CNTO) with colossal permittivity and low loss were designed and prepared via an oxide mixed method, and the effect of Cu2+, Nb5+ co-doped amount on dielectric properties were systematically investigated. Remarkably, the compositions of (Cu1/3Nb2/3)0.005Ti0.995O2 and (Cu1/3Nb2/3)0.01Ti0.99O2 exhibit large dielectric permittivity (epsilon r) of-27,060 and-41,200 accompanied with low dielectric loss (tan delta) of-0.011 and-0.032 at 1 kHz, respectively. Based on dielectric properties, relaxation behavior assessments and X-ray photoelectron spectroscopy analysis, we confirmed that the high dielectric permittivity of CNTO ceramics mainly originates from the electron-pinned defect-dipole (EPDD) effect. Moreover, the temperature stability value of epsilon r keeps stable of +/- 7.5% at 1 kHz from-200 to 200 degrees C for (Cu1/3Nb2/3)0.005Ti0.995O2 and from 10 to 200 degrees C for (Cu1/3Nb2/3)0.01Ti0.99O2 ceramics, which separately meet the X9F and Z9F capacitor requirements, respectively. The findings presented in this work might have important strategic significance for promoting the miniaturization of electronic components.