High thermal stability Si-Al based N-carrier for efficient and stable chemical looping ammonia generation

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作   者：

Xiong, Chuhao;  Wu, Ye;  Feng, Mingqian;  Fang, Jing;  Liu, Dong;  Shen, Laihong;  Argyle, Morris D.;  Gasem, Khaled A. M.;  Fan, Maohong; 

作者机构：

Southeast Univ;  Brigham Young Univ;  Univ Wyoming||Univ Wyoming;  Nanjing Univ Sci & Technol||Nanjing Univ Sci & Technol||Nanjing Univ Sci & Technol;  Nanjing Univ Sci & Technol||Nanjing Univ Sci & Technol; 

关键词：

Zirconia support;  Cyclic N-sorption/desorption performance;  High thermal stability;  Si -modified alumina-based N-carrier;  Catalytic N-carrier;  Chemical looing ammonia generation (CLAG); 

期刊名称：

Applied energy

i s s n：

0306-2619

年卷期：

2022 年 323 卷 Oct.1 期

页   码：

1-9

页   码：

摘   要：

Chemical looping ammonia generation (CLAG) is a promising NH3 production technology due to its potential for high yield of NH3 and low CO2 emission footprint. However, the stabilities of the existing N-carriers are problematic during the cyclic N-sorption/desorption. This research was designed to overcome that challenge through use of elemental doping and depositing the N-carrier on a support. The experimental results show that the N-sorption/desorption performance of gamma-Al2O3 N-carriers decreased with cycling due to the deterioration of the pore structure and phase transformation. A Si-modified alumina-based N-carrier, with a Si: Al molar ratio of 1:20 prepared by co-precipitation, was much more resistant to high-temperature phase transition and collapse of pore structure, resulting in highly stable cyclic N-sorption/desorption performance. Use of ZrO2 as a support for the Si-modified Al-based N-carrier further reduced NH3 decomposition and thus increased the NH3 yield and selectivity by 85.6% and 53.6% compared to that obtained with the pure gamma-Al2O3 N-carrier.