Div Interdisciplinary Mat Measurement Inst;
Yeungnam Univ;
South Korea|Yeungnam Univ;
Daejeon 34113;
Dept Phys;
Korea Res Inst Stand & Sci;
Gyongsan 38541;
South Korea|Korea Spectral Prod;
South Korea;
Dept Nano Sci;
Seoul 08381;
South Korea|Chonnam Natl Univ;
Gwangju 61186;
South Korea|Univ Sci & Technol;
Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials
i s s n：
0169-4332
年卷期：
2022 年
581 卷
Apr.15 期
页 码：
152421.1-152421.8
页 码：
摘 要：
A bias-selectable two-color heterojunction bandgap engineered InGaAs thin film infrared photodetector, monolithically grown on an InP substrate by metal-organic chemical vapor deposition, is demonstrated. The detector structure has two back-to-back diodes, with In0.53Ga0.47As and In0.83Ga0.17As absorbers separated by n(+)-InAsxP1-x metamorphic buffers to accommodate for the lattice mismatch between the absorbers of similar to 2%. The surface of the topmost metamorphic buffer of InAs0.63P0.37, acting as a lattice-matched virtual substrate for the In0.83Ga0.17As absorber, has a Gaussian height distribution with a low surface roughness of 2.8 nm. The InAsxP1-x buffers achieve a gradual lattice constant transition from In0.53Ga0.47As to In0.83Ga0.17As, with a sufficient strain relaxation of 97%. Compared to the In0.53Ga0.47As diode, the In0.83Ga0.17As diode shows a higher reverse saturation current density by a factor of approximately 10(4), owing to a shorter minority carrier lifetime and a higher intrinsic carrier concentration. The bias-dependent two-color detection at the cutoff wavelengths of 1.7 mu m and 2.6 mu m is achieved, enabled by the In0.53Ga0.47As (blue channel) and In0.83Ga0.17As (red channel) absorption, respectively. The two-color InGaAs photodetector exhibits high specific detectivities of 4.1x10(11) and 3.1x10(9) cm.Hz(1/2)/W at 300 K in both the blue and red channel regions, respectively.
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