Discipline Phys;
India;
Kalpakkam 603102;
Phys Met Div;
Indore 453552;
Indian Inst Technol Indore;
Discipline Met Engn & Mat Sci;
Indira Gandhi Ctr Atom Res;
Tamil Nadu;
Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics
i s s n：
0925-8388
年卷期：
2021 年
884 卷
页 码：
161113-
页 码：
摘 要：
The potential of polycrystalline Al-doped ZnO nanoparticles as an active material for UV photodetectors has been investigated. The Rietveld refinement of powder X-ray diffraction data revealed a single hexagonal phase of the nanoparticles. A slight deviation in the lattice cell constants from pristine ZnO was observed, associated with defect creation and strain generated due to Al3+ substitution. High-resolution transmission electron microscopy image reveals a spherical morphology of both the doped and undoped ZnO nano-particles. Stacking faults observed in the Al-doped samples is an indication of a proper Al-doping and is a signature of high density of crystal defects. The bandgap was found to reduce due to the delocalization of impurity energy states as a result of Al3+ substitution. Consequently, conductivity was improved in doped samples. Photoluminescence spectroscopy revealed a strong dependence of the emissions from defect sites on dopant content. Further, a correlation of the FWHM of the E-2(high) Raman mode to the Urbach energy was observed. The UV sensing analysis demonstrates the enhancement of the photocurrent and improved sensitivity. Thus, this work provides a simple, cost-effective, and tunable processing strategy for synthe-sizing and applying ZnO-based nanomaterials for high-performance UV photodetectors. (C) 2021 Elsevier B.V. All rights reserved.
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