A method of manufacturing a structure includes a step of preparing a substrate including a silicon section, recessed sections and protruding sections formed by etching the silicon section, and a first insulating layer disposed on top portions of the protruding sections a step of forming second insulating layers on sidewalls and bottom portions of the recessed sections a step of forming seed layers containing metal above the bottom portions of the recessed sections and a step of forming plating layers in such a manner that the recessed sections are filled with metal by electroplating. The second insulating layers contain an organopolysiloxane having at least one of a partial structure represented by the following formula (1) and a partial structure represented by the following formula (2):where R1, R2, and R3 represent alkyl groups identical to or different from each other.
