The present invention relates to a laser sensor for self-mixing interferometry. The laser sensor comprises at least one semiconductor laser light source emitting laser radiation and at least one photodetector (6) monitoring the laser radiation of the laser light source. The laser light source is a VECSEL having a gain medium (3) arranged in a layer structure (15) on a front side of a first end mirror (4), said first end mirror (4) forming an external cavity with an external second end mirror (5). The proposed laser sensor provides an increased detection range and can be manufactured in a low-cost production process.
