Ryan Field,Husam Katnani,Bruno Do Valle,Rong Jin,Jacob Dahle
申请号：
US16283730
公开号：
US10515993B2
申请日:
2019.02.22
申请国别(地区):
US
年份:
2019
代理人:
摘要：
An exemplary stacked photodetector assembly includes a first wafer and a second wafer bonded to the first wafer. The first wafer includes a SPAD and has a thickness T1 configured to minimize absorption by the first wafer of photons included in light incident upon the first wafer while the SPAD is in a disarmed state. The second wafer has a thickness T2 configured to provide structural support for the first wafer. The stacked photodetector assembly includes a fast gating circuit electrically coupled to the SPAD and configured to arm and disarm the SPAD.
