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トモシンセシス及び静的イメージング用の非晶質セレンフラットパネルX線イメージャ
专利权人:
ホロジック, インコーポレイテッド
发明人:
ヂエンスエ ジン,ローレンス チェン
申请号:
JP2006039211
公开号:
JP5781717B2
申请日:
2006.02.16
申请国别(地区):
JP
年份:
2015
代理人:
摘要:
A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on and in physical and electrical contact with an amorphous selenium-based charge generator layer, thereby reducing ghosting. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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