A method of fabrication of a collimator structure on a detector that includes applying a first layer of resist to a semiconductor sensor, applying a second layer of resist over the first layer of resist and the semiconductor sensor to cover both the first layer of resist and the semiconductor sensor, exposing the second layer of resist to ultraviolet (UV) light with a photomask to transfer a pattern from the photomask to the second layer of resist, removing portions of the second layer of resist corresponding to the pattern from the photomask to produce openings in the second layer of resist, which expose upper portions of the semiconductor sensor, and depositing a layer of metal in the openings and on the second layer of resist to cover the openings, the first layer of resist, the second layer of resist, and the semiconductor sensor.
