Christopher James Newsome,Simon Goddard,Nicholas Dartnell
申请号：
GB20170005676
公开号：
GB2561246(A)
申请日:
2017.04.07
申请国别(地区):
英国
年份:
2018
代理人:
摘要：
A gas sensor system 100 has at least one first field effect transistor (FET) 200 comprising first source and drain electrodes (107, 109, fig 2) and at least one second field effect transistor 300 comprising second source and drain electrodes different from the first source and drain electrodes. Different responses of the first and second FETs to gases in an environment may be used to differentiate between the gases, for example between 1-methylcyclopropene (1MCP) and ethylene. The source and drain electrodes of the first FET 200 may comprise a gold layer (107A, fig 2) and an oxide layer (107B, fig 2) and the source and drain electrodes of the second FET may comprise a different transition metal layer such as silver and an oxide layer. In a second embodiment, an FET for detecting an alkene includes a gate electrode, source and drain electrodes, a semiconductor later and a dielectric layer.
