A method for stimulating the basic biochemical reactions of an organism at tissue treatment and regeneration, comprising exposure of skin areas to terahertz radiation in the range of 0.02 THz to 8 THz, the carrier of said radiation representing infrared radiation in the range of 1 to 56 µm. The method can be embodied with the aim of a panel for tissue treatment and regeneration. The panel comprises n emitters in the form of silicon light emitting diodes generating terahertz radiation in the range of 0.02 THz to 8 THz. Maximal summary average luminosity flux of these emitters is calculated according to medical indications the panel dimensions are calculated basing on the required exposure area that provides non-linear effect of regenerative influence intensification at simultaneous activation of light emitting diodes the number of light emitting diodes on the panel is defined depending on the emitters aperture size. The panel is comprised of emitters. Each emitter represents a source of terahertz radiation in the form of semiconductor silicon light emitting diode, generating infrared radiation by means of emitting matrices of planar silicon structures, this infrared radiation being the carrier of terahertz radiation, whereas the substrate of an emitting matrix represents silicon quantum wells with p-type conductivity, self-ordered inside ultrafine diffusion boron profiles generated in the surface of single-crystalline silicon (100) wafers with n-type conductivity, and the emitting element represents quantum-dimensional p-n junction embodying a cascade of longitudinal silicon self-ordered quantum wells with p-type conductivity, crossed by modulated quantum wire, whereas this quantum-dimensional p-n junction is located inside self-ordered silicon microresonator. Terahertz radiation frequency is provided by selecting geometry of topographic image of ultrafine diffusion boron profiles surface in silicon, subject to fluctuations of surface deformation potential, which cau
