PROBLEM TO BE SOLVED: To provide a semiconductor laser device which has high power and can irradiate substantially the same position with different wavelengths.SOLUTION: An edge-emitting stack type semiconductor laser device configured by stacking a first laser bar that emits light of a first wavelength and a second laser bar that emits light of a second wavelength that is different from the first wavelength includes a first positive electrode and a first negative electrode through which a current flows to the first laser bar and a second positive electrode and a second negative electrode through which a current flows to the first laser bar.SELECTED DRAWING: Figure 1COPYRIGHT: (C)2018,JPO&INPIT【課題】高出力であり、かつ、異なる波長を略同一の位置に照射可能な半導体レーザ装置を提供する。【解決手段】第１の波長の光を発光する第１のレーザバーと、第１の波長とは異なる第２の波長の光を発光する第２のレーザバーと、を積層して構成される、端面発光型のスタック型半導体レーザ装置であって、第１のレーザバーに電流を流す第１の正極電極および第１の負極電極、ならびに、第１のレーザバーに電流を流す第２の正極電極および第２の負極電極を、さらに備えるスタック型半導体レーザ装置を用いる。【選択図】図１
