Shyh-Shin Ferng,Chung-Li Huang,Yi-Hung Lin,Chungwei Wang
申请号：
US16599885
公开号：
US20200037979A1
申请日:
2019.10.11
申请国别(地区):
US
年份:
2020
代理人:
摘要：
A method includes forming a test key. The formation of the test key includes forming a first plurality of semiconductor strips, and cutting the first plurality of semiconductor strips into an array of a second plurality semiconductor strips, with each row of the array being formed from one strip in the first plurality of semiconductor strips, forming isolation regions in recesses between the second plurality of semiconductor strips, and recessing the isolation regions. The top portions of the second plurality of semiconductor strips protrude higher than the isolation regions form semiconductor fins, which form a fin array. An X-ray beam is projected on the test key. A diffraction pattern is obtained from scattered X-ray beam scattered from the test key.
