Cheng-Hung Chen,Shih-Chi Wang,Jeng-Horng Chen,Burn Jeng Lin
申请号：
US13484524
公开号：
US08987689B2
申请日:
2012.05.31
申请国别(地区):
US
年份:
2015
代理人:
摘要：
The present disclosure provides a method of increasing the wafer throughput by an electron beam lithography system. The method includes scanning a wafer using the maximum scan slit width (MSSW) of the electron beam writer. By constraining the integrated circuit (IC) field size to allow the MSSW to cover a complete field, the MSSW is applied to decrease the scan lanes of a wafer and thereby increase the throughput. When scanning the wafer with the MSSW, the next scan lane data can be rearranged and loaded into a memory buffer. Thus, once one scan lane is finished, the next scan lane data in the memory buffer is read for scanning.
