MULTIVALENCE PHOTOCATALYTIC SEMICONDUCTOR ELEMENTS

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专利权人:

发明人:

Ekambaram Sambandan,Bin Zhang

申请号：

US13840859

公开号：

US20140271916A1

申请日:

2013.03.15

申请国别(地区):

US

年份:

2014

代理人:

摘要：

Described herein are elements comprising a p-type semiconductor comprising mixed valence oxide compounds and an n-type semiconductor having a deeper valence band than the p-type semiconductor valence bands wherein the semiconductor types are in ionic communication with each other. The elements enhance photocatalytic activity.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/