Rohm and Haas Electronic Materials CMP Holdings, Inc. ;Dow Global Technologies LLC
发明人:
Qian Bainian,Yeh Fengji,Wang Te-Chun,Tseng Sheng-Huan,Tung Kevin Wen-Huan,DeGroot Marty W.
申请号：
US201715476404
公开号：
US2018281149(A1)
申请日:
2017.03.31
申请国别(地区):
美国
年份:
2018
代理人:
摘要：
The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.
