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PATTERNED IMPLANT AND METHOD
专利权人:
AMS RESEARCH CORPORATION
发明人:
JAGGER, Karl, A. KA,‧賈格爾,HACKER, Dean D,‧哈克,FELTON, Jessica J,‧費爾頓,FRIGSTAD, John, R. JR,‧費瑞格斯丹德,PETERSON, Alex A,‧彼得森
申请号:
HK16110943.9
公开号:
HK1222787A
申请日:
2016.09.15
申请国别(地区):
HK
年份:
2017
代理人:
摘要:
A unitary or homogeneous patterned implant is provided. The implant is constructed of patterned cells formed by way of a molding, die casting, laser etching, laser cutting, extruding, and the like. Portions of the implant can be formed into sinusoid or other waveform strut members to control and promote elongation, expansion or contraction along single or multiple axes. As such, controlled and designated stress, tension and compression distribution is promoted across specific or localized areas of the implant.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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