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Stable indium-containing semiconductor nanocrystals
专利权人:
发明人:
Joseph Bartel,Yongfen Chen,Eric Tulsky,Joseph Treadway
申请号:
US14170349
公开号:
US09291566B2
申请日:
2014.01.31
申请国别(地区):
US
年份:
2016
代理人:
摘要:
Nanocrystals having an indium-based core and methods for making them and using them to construct core-shell nanocrystals are described. These core-shell nanocrystals are highly stable and provide higher quantum yields than known nanocrystals of similar composition, and they provide special advantages for certain applications because of their small size.
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