Pradip Bose,Alper Buyuktosunoglu,Xiaochen Guo,Hillery C. Hunter,Jude A. Rivers,Vijayalakshmi Srinivasan
申请号：
US14320219
公开号：
US09351899B2
申请日:
2014.06.30
申请国别(地区):
US
年份:
2016
代理人:
摘要：
Systems and methods to manage memory on a spin transfer torque magnetoresistive random-access memory (STT-MRAM) are provided. A particular method of managing memory includes determining a temperature associated with the memory and determining a level of write queue utilization associated with the memory. A write operation may be performed based on the level of write queue utilization and the temperature.
