KOREA INSTITUTE OF MACHINERY & MATERIALS;HUR, Shin;허신;이영화;KIM, Wan-Doo;LEE, Young Hwa;김완두;한국기계연구원;JUNG, Young Do;정영도
发明人:
HUR, Shin,허신,JUNG, Young Do,정영도,LEE, Young Hwa,이영화,KIM, Wan-Doo,김완두
申请号：
KRKR2012/007318
公开号：
WO2013/094849A1
申请日:
2012.09.12
申请国别(地区):
KR
年份:
2013
代理人:
摘要：
The present invention relates to a method for manufacturing a frequency separation device for a cochlear implant by using nanowire growth. The method for manufacturing the frequency separation device for the cochlear implant by using nanowire growth, according to the present invention, relates to the method for manufacturing the frequency separation device for a cochlear implant comprising an upper layer and a lower layer, and the method comprises the steps of: manufacturing the upper layer； manufacturing the lower layer； and coupling the upper layer and the lower layer, wherein the step for manufacturing the lower layer comprises the steps of stacking a silicone oxide (SiO) layer on an upper surface and a lower surface of a base, stacking a base film comprising silicone nitride (Si3N4) on the silicone oxide layer that is on the upper surface of the base, patterning a lower layer electrode portion on the base film, growing the nanowire on the lower layer electrode portion, and exposing a lower surface of the base film to the exterior by removing a portion of a layer provided on the lower surface of the base film. As a result, provided is the method for manufacturing the frequency separation device for the cochlear implant by using nanowire growth, which can help recognize an acoustic wave of and broadband frequency by using nanowire growth.La présente invention concerne un procédé de fabrication d'un dispositif de séparation de fréquences pour un implant cochléaire à l'aide d'une croissance de nanofil. Le procédé de fabrication du dispositif de séparation de fréquences pour l'implant cochléaire à l'aide d'une croissance de nanofil, selon la présente invention, concerne le procédé de fabrication de dispositif de séparation de fréquences pour un implant cochléaire comprenant une couche supérieure et une couche inférieure, et le procédé comprend les étapes consistant à : fabriquer la couche supérieure ； fabriquer la couche inférieure ； et coupler la couche supérieure e
