A manufacturing method for a humidity sensor, and the humidity sensor manufactured by using the method. The method comprises the following steps: forming a conductive zero layer (2) on a silicon wafer substrate (1) by using an ion implantation method and high-temperature annealing; growing a first silicon oxide dielectric layer (3) on the conductive zero layer; forming a first contact hole (4) on the first silicon oxide dielectric layer; depositing a first metal thin film layer (5) on the first silicon oxide dielectric layer by using a physical vapor deposition method, the first metal thin film layer being connected to the conductive zero layer by means of the first contact hole; forming a heating resistor; depositing a second silicon oxide dielectric layer (6), and forming a second contact hole (7) penetrating through the second silicon oxide dielectric layer; depositing a second metal thin film layer (8), the second and first metal thin film layers being connected by means of the second contact hole; formin
