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광도전성 물질을 포함하는 페이스트, 광전변환층의 제조방법, 광전변환층, 및 방사선 검출기
专利权人:
SAMSUNG ELECTRONICS CO.; LTD.
发明人:
KIM, SUN IL,김선일,PARK, JAE CHUL,박재철,KIM, CHANG JUNG,김창정
申请号:
KR1020120028961
公开号:
KR1020130107120A
申请日:
2012.03.21
申请国别(地区):
KR
年份:
2013
代理人:
摘要:
PURPOSE: A paste is provides a radiation detector with excellent performance and a photoelectric conversion layer with excellent sensitivity and low dark current characteristics.CONSTITUTION: A paste includes a photoelectric conducting material (10) a binder which has a polymerization degree of 600-1100 and a solvent (30) dissolving the binder. The photoconductive material includes at least one selected from HgI2, PbI2, PbO, TlBr, CdTe, CdZnTe, CdS, and BiI3. The content of the binder is 1-50 parts by weight based on 100.0 parts by weight of the photoconductive material. A manufacturing method of the photoelectric conversion layer comprises a step of spreading the paste on a substrate and a step of obtaining the photoelectric conversion layer by heat-treating the paste.COPYRIGHT KIPO 2013[Reference numerals] (10) Photoconductive material (20) Binder (600-1100 polymerization degree) (30) Solvent (40) Addition agent광도전성 물질을 포함하는 페이스트, 광전변환층의 제조방법, 광전변환층, 및 방사선 검출기가 개시된다. 개시된 페이스트는 광도전성 물질, 600~1100의 중합도를 갖는 바인더 및 용매를 포함한다.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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