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TECHNIQUES FOR GENERATING MULTIPLE LOW NOISE REFERENCE VOLTAGES
专利权人:
Analog Devices Global Unlimited Company
发明人:
Gaurav Gupta,Arthur J. Kalb
申请号:
US16048860
公开号:
US20200036366A1
申请日:
2018.07.30
申请国别(地区):
US
年份:
2020
代理人:
摘要:
Techniques to generate two separate temperature independent reference voltages. The reference voltages can be generated using a chain of Δ;VBE cells. A cross-quad Δ;VBE-cell-based bandgap voltage reference can cancel out noise of associated current sources by forcing them to correlate. Several Δ;VBE stages can be cascaded together to generate an appreciable PTAT component that can cancel the CTAT component from VBE. In some example configurations, only BJTs are used—;without requiring use of an amplifier—;to generate the bandgap voltages; in this way, extremely low noise voltage references can be generated. The PTAT and the CTAT voltages can be combined to generate a bandgap voltage of approximately VG0 or approximately 2VG0.
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