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Implant, and method and system for producing such an implant
专利权人:
Jan Hall
发明人:
Jan Hall
申请号:
US10499263
公开号:
US08827703B2
申请日:
2002.12.18
申请国别(地区):
US
年份:
2014
代理人:
摘要:
An implant and a method of producing the implant are provided. The implant can have at least one outer surface extending in its longitudinal direction. The implant can comprise an underlying wave pattern, an intermediate wave pattern, and a microscopic roughening layer. The underlying wave pattern can have waves that extend substantially in the longitudinal direction. Further, the intermediate wave pattern can be formed on the waves of the underlying wave pattern. Additionally, the microscopic roughening layer can be formed on top of the underlying wave pattern.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
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