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Controlled-porosity method for forming polishing pad
专利权人:
Rohm and Haas Electronic Materials CMP Holdings, Inc.;Dow Global Technologies LLC
发明人:
Tong Yuhua,Wank Andrew,Lugo Diego,Stack Marc R.,Veneziale David Michael,DeGroot Marty W.,Jacob George C.,Miller Jeffrey B.
申请号:
US201514751328
公开号:
US10005172(B2)
申请日:
2015.06.26
申请国别(地区):
美国
年份:
2018
代理人:
Biederman Blake T.
摘要:
The invention is to a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method includes applying droplets of a liquid polymer against a substrate to form a plurality of pores. The liquid polymer contains a nonionic surfactant, the nonionic surfactant has a concentration sufficient to facilitate growth of pores within the liquid polymer and an ionic surfactant has a concentration sufficient to limit growth of the pores within the liquid polymer. Curing the solid polymer forms a polishing pad with final size of the plurality of pores controlled by the concentration of nonionic surfactant and ionic surfactants.
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