There is provided a method of manufacturing a semiconductor device. The method of manufacturing comprises a film formation process of forming a molybdenum layer that is mainly made of molybdenum (Mo), on at least one of a semiconductor layer, an insulating film and an electrode in the semiconductor device; a heat treatment process of heating the molybdenum layer at temperature of not lower than 200° C.; and a dry etching process of processing the semiconductor device that includes the formed molybdenum layer by dry etching, subsequent to the heat treatment process.
