超短期滞留時間でのレーザアニーリングシステム及び方法

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专利权人:

ウルトラテック インク

发明人:

ハウリーラック、エム、アンドリュー,アニキチェフ、セルゲイ

申请号：

JP20150246045

公开号：

JP6116656(B2)

申请日:

2015.12.17

申请国别(地区):

日本

年份:

2017

代理人:

摘要：

Laser annealing systems and methods with ultra-short dwell times are disclosed. The method includes locally pre-heating the wafer with a pre-heat line image and then rapidly scanning an annealing image relative to the pre-heat line image to define a scanning overlap region that has a dwell time is in the range from 10 ns to 500 ns. These ultra-short dwell times are useful for performing surface or subsurface melt annealing of product wafers because they prevent the device structures from reflowing.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/