您的位置: 首页 > 农业专利 > 详情页

CHEMICAL MECHANICAL POLISHING OF TUNGSTEN USING METHOD AND COMPOSITION CONTAINING QUATERNARY PHOSPHONIUM COMPOUNDS
专利权人:
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.;HO, Lin-Chen;TSAI, Wei-Wen;LEE, Cheng-Ping
发明人:
HO, Lin-Chen,TSAI, Wei-Wen,LEE, Cheng-Ping
申请号:
WO2016CN100492
公开号:
WO2018058347(A1)
申请日:
2016.09.28
申请国别(地区):
世界知识产权组织国际局
年份:
2018
代理人:
摘要:
A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
相关专利

意 见 箱

匿名:登录

个人用户登录

找回密码

第三方账号登录

忘记密码

个人用户注册

必须为有效邮箱
6~16位数字与字母组合
6~16位数字与字母组合
请输入正确的手机号码

信息补充