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Fault-tolerant multielectrode array for brain implantable device
专利权人:
Bharat S. Joshi
发明人:
Bharat S. Joshi,Ipsita Acharya,Hitten P. Zaveri
申请号:
US14114390
公开号:
US09277874B2
申请日:
2012.04.27
申请国别(地区):
US
年份:
2016
代理人:
摘要:
A multielectrode array with fault-tolerance for use in conjunction with a brain implantable device includes a sensor grid composed of a plurality of sensors, the plurality of sensors including primary sensors and spare sensors. The multielectrode array also includes signal processing circuitry associated with the plurality of sensors and a control system associated with the sensor grid for replacing faulty primary sensors with spare sensors.
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