Fault-tolerant multielectrode array for brain implantable device

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专利权人:

Bharat S. Joshi

发明人:

Bharat S. Joshi,Ipsita Acharya,Hitten P. Zaveri

申请号：

US14114390

公开号：

US09277874B2

申请日:

2012.04.27

申请国别(地区):

US

年份:

2016

代理人:

摘要：

A multielectrode array with fault-tolerance for use in conjunction with a brain implantable device includes a sensor grid composed of a plurality of sensors, the plurality of sensors including primary sensors and spare sensors. The multielectrode array also includes signal processing circuitry associated with the plurality of sensors and a control system associated with the sensor grid for replacing faulty primary sensors with spare sensors.

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