適応的電荷平衡エッジ終端

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专利权人:

ヴィシェイ−シリコニックス

发明人:

パタナヤク， ディーヴァ エヌ．,ティピルネニ， ナヴィーン

申请号：

JP20150515212

公开号：

JP6109930(B2)

申请日:

2013.05.30

申请国别(地区):

日本

年份:

2017

代理人:

摘要：

In one embodiment, a semiconductor device can include a substrate including a first type dopant. The semiconductor device can also include an epitaxial layer located above the substrate and including a lower concentration of the first type dopant than the substrate. In addition, the semiconductor device can include a junction extension region located within the epitaxial layer and including a second type dopant. Furthermore, the semiconductor device can include a set of field rings in physical contact with the junction extension region and including a higher concentration of the second type dopant than the junction extension region. Moreover, the semiconductor device can include an edge termination structure in physical contact with the set of field rings.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/