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イオン発生装置
专利权人:
シャープ株式会社
发明人:
山本 明,片岡 康孝,渡辺 啓二
申请号:
JP2011247924
公开号:
JP5871570B2
申请日:
2011.11.11
申请国别(地区):
JP
年份:
2016
代理人:
摘要:
The present invention provides an ion generation device wherein, in a case where an abnormality has occurred in the device, the abnormality and the location of the abnormality can be identified easily. PCI control circuits (51-54) determine whether or not the operation of the ion generation device is normal. A microcomputer (50) controls a louver control circuit (58) such that the open/close states of louvers (21-24) differ for cases where it has been determined by the PCI control circuits (51-54) that ion generation units (41-44) are normal and where it has been determined that the ion generation unit(s) is/are not normal. For example, in a case where it has been determined by the PCI control circuits (51-54) that the discharge of ions from one of a plurality of discharge ports (11-14) is not normal, the operation of the ion generation device (100) is stopped and only the louver corresponding to said discharge port is opened.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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